An apparatus (46, 416, 470) is provided for sensing physical parameters. The apparatus (46, 416, 470) comprises a magnetic tunnel junction (MTJ) (32, 432), first and second electrodes (36, 38, 426, 434), a magnetic field source (MFS) (34, 445, 476) whose magnetic field (35) overlaps the MTJ (32, 432) and a moveable magnetic cladding element (33, 448, 478) whose proximity (43, 462, 479, 479') to the MFS (34, 445, 476) varies in response to an input to the sensor. The MFS (34, 445, 476) is located between the cladding element (33, 448, 478) and the MTJ (32, 432). Motion (41, 41', 41-1, 464, 477) of the cladding element (33, 448, 478) relative to the MFS (34, 445, 476) in response to sensor input causes the magnetic field (35) at the MTJ (32, 432) to change, thereby changing the electrical properties of the MTJ (32, 432). A one-to-one correspondence (54) between the sensor input and the electrical properties of the MTJ (32, 432) is obtained.