A method and apparatus for wafer inspection. The apparatus is capable of
testing a sample having a first layer that is at least partly conductive
and a second, dielectric layer formed over the first layer, following
production of contact openings in the second layer, the apparatus
includes: (i) an electron beam source adapted to direct a high current
beam of charged particles to simultaneously irradiate a large number of
contact openings at multiple locations distributed over an area of the
sample; (ii) a current measuring device adapted to measure a specimen
current flowing through the first layer in response to irradiation of the
large number of contact openings at the multiple locations; and (iii) a
controller adapted to provide an indication of the at least defective
hole in response to the measurement.