In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.

 
Web www.patentalert.com

< Method and apparatus for wide area surveillance of a terrorist or personal threat

> Monitoring a monolayer deposition (MLD) system using a built-in self test (BIST) table

> Titanium complexes, their production methods, titanium-containing thin films, and their formation methods

~ 00548