The present invention relates to a semiconductor device having first and
second active device regions that are located in a semiconductor
substrate and are isolated from each other by an isolation region
therebetween, while the semiconductor device contains a first
sub-lithographic interconnect structure having a width ranging from about
20 nm to about 40 nm for connecting the first active device region with
the second active device region. The semiconductor device preferably
contains at least one static random access memory (SRAM) cell located in
the semiconductor substrate, and the first sub-lithographic interconnect
structure directly cross-connects a pull-down transistor of the SRAM cell
with a pull-up transistor thereof without any metal contact therebetween.
The first sub-lithographic interconnect structure can be readily formed
by lithographic patterning of a mask layer, followed by formation of
sub-lithographic features using either self-assembling block copolymers
or dielectric sidewall spacers.