Disclosed is a semiconductor laser (10) in which the substrate (11) comprises at least three independent functional sections (17, 20, 23) in the direction of light wave propagation (A), said functional sections (17, 20, 23) serving different functions and being individually triggered by means of electrodes (15, 18, 21) via electrode leads (16, 19, 22). An intensification zone (17), a grid zone (20), and a phase adjustment zone (23) are provided as functional sections. The light wave is optically intensified in the intensification zone (17) while the phase of the advancing and returning wave is adjusted in the phase adjustment zone (23). The grid zone (20) is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone (17) and the phase adjustment zone (23).

Web www.patentalert.com

< Polarizing plate comprising light-scattering polarizing element and light-absorbing polarizing element

> Enhanced data capture from imaged documents

> VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter

~ 00538