The invention provides a technology for manufacturing a higher performance and higher reliability semiconductor device at low cost and with high yield. The semiconductor device of the invention has a first conductive layer over a first insulating layer; a second insulating layer over the first conductive layer, which includes an opening extending to the first conductive layer; and a signal wiring layer for electrically connecting an integrated circuit portion to an antenna and a second conductive layer adjacent to the signal wiring layer, which are formed over the second insulating layer. The second conductive layer is in contact with the first conductive layer through the opening, and the first conductive layer overlaps the signal wiring layer with the second insulating layer interposed therebetween.