A method for manufacturing a ferroelectric memory includes the steps of: (a) forming a ferroelectric capacitor by sequentially laminating, on a substrate, a lower electrode, a ferroelectric layer and an upper electrode; (b) forming a first dielectric layer that covers the ferroelectric capacitor; (c) forming a contact hole in the first dielectric layer to expose the upper electrode; (d) heating the substrate to 350.degree. C. or higher; and (e) forming a conductive layer inside the contact hole.