A production method for a semiconductor device according to the present invention includes: step (A) of providing a substrate including a semiconductor layer having a principal face, the substrate having a device isolation structure (STI) formed in an isolation region 70 for partitioning the principal face into a plurality of device active regions 50, 60; step (B) of growing an epitaxial layer containing Si and Ge on selected device active regions 50 among the plurality of device active regions 50, 60 of the principal face of the semiconductor layer; and step (C) of forming a transistor in, among the plurality of device active regions 50, 60, each of the device active regions 50 on which the epitaxial layer is formed and each of the device active regions A2 on which the epitaxial layer is not formed. Step (A) includes step (a1) of forming, in the isolation region 70, a plurality of dummy regions 80 surrounded by the device isolation structure (STI), and step (B) includes step (b1) of growing a layer of the same material as that of the epitaxial layer on selected regions among the plurality of dummy regions 80.

 
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