A production method for a semiconductor device according to the present
invention includes: step (A) of providing a substrate including a
semiconductor layer having a principal face, the substrate having a
device isolation structure (STI) formed in an isolation region 70 for
partitioning the principal face into a plurality of device active regions
50, 60; step (B) of growing an epitaxial layer containing Si and Ge on
selected device active regions 50 among the plurality of device active
regions 50, 60 of the principal face of the semiconductor layer; and step
(C) of forming a transistor in, among the plurality of device active
regions 50, 60, each of the device active regions 50 on which the
epitaxial layer is formed and each of the device active regions A2 on
which the epitaxial layer is not formed. Step (A) includes step (a1) of
forming, in the isolation region 70, a plurality of dummy regions 80
surrounded by the device isolation structure (STI), and step (B) includes
step (b1) of growing a layer of the same material as that of the
epitaxial layer on selected regions among the plurality of dummy regions
80.