To provide a method of releasing charges which have been injected into
charge accumulating layers of nonvolatile memory elements without using a
substrate terminal such as a p well or an n well, as a method for
deleting data from a NAND-type nonvolatile memory. In the method for
deleting data from the NAND-type nonvolatile memory, charges stored in a
charge accumulating layer of a first nonvolatile memory element are
released by applying a first potential to a bit line and a source line, a
second potential to a control gate of the first nonvolatile memory
element, and a third potential which is different from the second
potential to a control gate of a second nonvolatile memory element.