A method for manufacturing a semiconductor device includes the steps of forming a circuit element on a semiconductor substrate, forming an insulation film covering the circuit element, forming a first electrode on the insulation film, forming a ferroelectric film on the first electrode, forming a second electrode on the ferroelectric film, forming a hardmask comprised of lower, middle, and upper layer mask films on the second electrode, etching the second electrode using the upper layer mask film as an etching mask, removing the upper layer mask film remaining after the etching of the second electrode, etching the ferroelectric film and the first electrode using the middle layer mask film as an etching mask, removing the middle layer mask film remaining after the etching of the ferroelectric film and the first electrode, and removing the lower layer mask film.