A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.

 
Web www.patentalert.com

< Asperity data storage system, method and medium

> Multi-layer nano-particle preparation and applications

> Green catalytic process for the synthesis of acetyl salicylic acid

~ 00524