A method for forming a ferroelectric capacitor includes the steps of (a)
forming a first conductive layer above a base substrate, (b) forming, on
the first conductive layer, a ferroelectric layer containing a
ferroelectric material having oxygen, (c) forming a second conductive
layer on the ferroelectric layer, (d) forming a mask on the second
conductive layer, (e) etching at least the second conductive layer using
the mask, to form a capacitor composed of the first conductive layer, the
ferroelectric layer and the second conductive layer, (f) adhering
fluorine to an exposed surface of the ferroelectric layer that is exposed
by the etching after the step (e), and (g) applying heat treatment to the
capacitor.