A dielectric porcelain composition here contains as main components BaO, Nd.sub.2O.sub.3, TiO.sub.2, MgO and SiO.sub.2 at the given ratios and as subordinate components ZnO, B.sub.2O.sub.3 and CuO at given ratios, so that it can have a low-temperature sintering capability stable and reliable enough to permit a conductor formed of Ag, an alloy containing Ag as a main component or the like to be used as an internal conductor. It is also possible to obtain a dielectric porcelain composition that has limited resonance frequency changes with temperature changes and a specific dielectric constant lower than that of a BaO-rare earth oxide-TiO.sub.2 base dielectric porcelain composition, and so is suitable for multilayer type device formation.