A spin-valve magnetoresistive effect film includes a magnetization fixed
layer, a magnetization free layer, and a nonmagnetic intermediate layer
interposed therebetween. The nonmagnetic intermediate layer has a
conduction part disposed in an insulation layer and made of a nonmagnetic
metal material. The ferromagnetic film stacked on an upper side of the
nonmagnetic intermediate layer, out of ferromagnetic films constituting
the magnetization fixed layer and the magnetization free layer has a
perpendicular orientation part which is disposed above the conduction
part and whose crystal growth direction is substantially perpendicular to
a film plane, and a non-perpendicular orientation part which exists in a
portion other than the perpendicular orientation part. A magnetoresistive
effect element has a pair of electrodes passing a sense current in a
direction perpendicular to the film plane of the spin-valve
magnetoresistive effect film.