The present invention relates to the field of a semiconductor device
having a ferroelectric material capacitor and method of making the same.
The semiconductor device includes a capacitor having a triple-level
oxygen barrier layer pattern formed by an oxygen barrier metal layer, a
material layer formed of a conductive solid solution by compounding the
oxygen barrier metal layer and oxygen, and an oxygen barrier metal on an
interlayer dielectric with a contact plug. The capacitor also has an
electrode and a ferroelectric film electrically contacting to the oxygen
barrier layer.Further, a wetting layer is formed between the oxygen
barrier layer and the contact plug, and an iridium oxygen layer is formed
between the oxygen barrier layer and a capacitor electrode.