A laser diode capable of improving surge withstand voltage by preventing damage to a rear end surface, and a method of manufacturing the same are provided. A laser diode includes a laser resonator between a first end surface as a main emission end surface and a second end surface facing the first end surface, and the laser diode includes a light absorption inhibition region on the second end surface side of the laser resonator.

 
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< Slab laser amplifier with parasitic oscillation suppression

> Semiconductor laser device and manufacturing method thereof

> Laser processing device

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