A method of forming a substantially relaxed, high-quality
SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is
provided. The method includes first implanting ions into a Si-containing
substrate to form an implant rich region in the Si-containing substrate.
The implant rich region has a sufficient ion concentration such that
during a subsequent anneal at high temperatures a barrier layer that is
resistant to Ge diffusion is formed. Next, a Ge-containing layer is
formed on a surface of the Si-containing substrate, and thereafter a
heating step is performed at a temperature which permits formation of the
barrier layer and interdiffusion of Ge thereby forming a substantially
relaxed, single crystal SiGe layer atop the barrier layer.