A semiconductor memory device and a method of manufacturing the
semiconductor memory device, in which a bit line can have a low
resistance without an increase in the thickness of the bit line. In the
semiconductor memory device, an insulating layer having a contact hole
that exposes a conductive region is formed on a semiconductor substrate
having the conductive region. A barrier metal layer is formed along the
surface of the insulating layer and the surface of the contact hole. A
grain control layer is formed between the barrier metal layer and the
tungsten layer. A tungsten layer is formed on the grain control layer. A
grain size of the tungsten layer is increased by the grain control layer.