Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

 
Web www.patentalert.com

< System and method for determining a number of overwitten blocks between data containers

> Techniques for determining electronic document information for paper documents

> Speed typing apparatus for entering letters of alphabet with at least thirteen-letter input elements

~ 00504