A surface-emitting type semiconductor laser includes a substrate; a first
mirror disposed above the substrate; an active layer disposed above the
first mirror; a second mirror disposed above the active layer; a first
columnar section including the active layer, the first columnar section
not having anisotropy; a first dielectric layer disposed in the first
columnar section, the first dielectric layer including a symmetric
opening section; a second columnar section disposed above the first
columnar section, the second columnar section having an outer wall that
has anisotropy; and a second dielectric layer disposed in the second
columnar section, the second dielectric layer including an asymmetric
opening section.