A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (K.sub.aNa.sub.1-a).sub.xNbO.sub.3, "a" and "x" in the compositional formula being respectively 0.1

 
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> Semiconductor memory device with high permeability lines interposed between adjacent transmission lines
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