A method of real time dynamic CD control in a system for patterning resist coated wafers. The method includes lithographically patterning the resist coated wafers using predetermined exposure dose and focus settings. The method further includes obtaining CD metrology data from test areas on the patterned wafers, where different groups of test areas are selected for two or more of the patterned wafers. A CD metrology data map is constructed using the CD metrology data, adjusted exposure dose and/or focus settings are established using the CD metrology data, and additional wafers are then patterned.