In one aspect of the present invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first wavelength laser, and a second semiconductor laser element provided on a second substrate which has lower heat conductivity ratio than the first substrate, mounted on the supporting member as face down, and configured to emit a second wavelength laser toward in substantially a same direction as the first wavelength laser, and in another aspect of the invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first wavelength laser, a second semiconductor laser element provided on a second substrate which has lower heat conductivity ratio than the first substrate, mounted on the supporting member as face down, and configured to emit a second wavelength laser in substantially a same direction as the first wavelength laser, and a third semiconductor laser element provided on the second substrate, as face down, and configured to emit a third wavelength laser in substantially a same direction as the first wavelength laser.