A semiconductor device includes a pad electrode layer and an align mark layer, formed on the semiconductor substrate. A passivation layer is formed on the semiconductor substrate and exposes at least a portion of the top of the pad electrode layer and at least a portion of the top of the align mark layer. A light-transmitting protecting layer covers at least a portion of the passivation layer, exposes the top portion of the pad electrode layer exposed from the passivation layer, and covers the portion of the align mark layer exposed from the passivation layer.