A non-volatile, resistively switching memory cell includes a first
electrode, a second electrode and a solid electrolyte, which is arranged
such that it makes contact between the electrodes, and is composed of an
amorphous or partially amorphous, non-oxidic matrix and a metal which is
distributed in the amorphous or partially amorphous, non-oxidic matrix
and whose cations migrate to the cathode in the amorphous or partially
amorphous, non-oxidic matrix under the influence of an electrical
voltage, wherein the solid electrolyte contains one or more further
metallic materials for stabilization of the amorphous state of the
matrix.