A memory cell includes a semiconductor feature and a phase change material. The semiconductor feature defines a groove that divides the semiconductor feature into a first electrode and a second electrode. The phase change material at least partially fills this groove and acts to electrically couple the first and second electrodes. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to at least one of the first and second electrodes. The semiconductor feature comprises silicon and the groove comprises at least one silicon sidewall with a substantially <111> crystal plane orientation.