A non-volatile memory device having improved electrical characteristics
and a method of fabricating the non-volatile memory device are provided.
The non-volatile memory device includes a gate electrode, which is formed
on a semiconductor substrate on which source and drain regions are
formed, a trapping structure, which is interposed between the
semiconductor substrate and the gate electrode and comprises an electron
tunneling layer and a charge trapping layer, and an electron
back-tunneling prevention layer, which is interposed between the gate
electrode and the charge trapping layer, prevents electrons in the gate
electrode from back-tunneling through the charge trapping layer, and is
formed of a metal having a higher work function than the gate electrode.