A semiconductor device with micro connecting elements and method for producing the same disclosed. In one embodiment, the semiconductor device includes a number of micro connecting elements for the high-frequency coupling of components of the semiconductor device. The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. In this configuration, the first and third layers and extend along a common center line and shield one another against electromagnetic interference fields. The first and third layers and are fixed on correspondingly adapted pairs of contact terminal areas of the components.