A method of fabricating microelectromechanical (MEMs) systems and in particular for producing silicon carbide (SiC) MEMs devices with improved mechanical properties. The method comprises reacting a dry etch plasma with a layered microstructure; the layered microstructure having an etch mask, a sacrificial layer and a device layer arranged between the etch mask and the sacrificial layer. The dry etch plasma is introduced into the environment of the layered microstructure such that the device layer is etched anisotropically and the sacrificial layer is etched substantially isotropically. The invention also provides a method for tuning MEMs devices by material de-stressing using an inert gas in the dry etch plasma.