The invention relates to a circuit for reading a cell of a bit line, including first and second transistors for controlling the bit line and a reference line, respectively, a reference transistor connected to the second control transistor and a write transistor of the reference current connected to the first control transistor, for comparing the current of the bit line and the reference current, characterized in that a first intermediate transistor is connected to the write transistor parallel to the first control transistor, and in that a second intermediate transistor is connected between the gate and the drain of the reference transistor parallel to the second control transistor, and polarization transistors are connected in series, respectively, to the intermediate transistors so as to superimpose a current over the reference current.

 
Web www.patentalert.com

< Program method with optimized voltage level for flash memory

> Magnetic random access memory

~ 00484