A memory device having a reduced-thickness phase change film is described along with methods for manufacture. The device includes an electrode element, in electrical contact with a phase change layer. The latter element is formed from a memory material having at least two solid phases. A top electrode element makes electrical contact with the phase change layer at a location remote from the contact location of the electrode element. This construction produces a current flow through the phase change element in which at least a portion thereof lies in a path transverse to the current flow path within the electrode element.

 
Web www.patentalert.com

< Coupling light into microresonators

> Word line driving circuit putting word line into one of high level, low level and high impedance

~ 00483