The present invention is directed to a thick film conductive composition
comprising: (a) electrically conductive silver powder; (b) Mn-containing
additive; (c) glass frit wherein said glass frit has a softening point in
the range of 300 to 600.degree. C.; dispersed in (d) organic medium.The
present invention is further directed to a semiconductor device and a
method of manufacturing a semiconductor device from a structural element
composed of a semiconductor having a p-n junction and an insulating film
formed on a main surface of the semiconductor comprising the steps of (a)
applying onto said insulating film the thick film composition as describe
above; and (b) firing said semiconductor, insulating film and thick film
composition to form an electrode.