A method for detachable bonding that forms an amorphous silicon layer, or
a silicon oxide layer with a high hydrogen content, on an element such as
a carrier substrate. A second element, such as a substrate, is bonded to
the amorphous silicon layer or silicon oxide layer, and the second
element may then have a portion removed. A third element, such as a host
or carrier substrate, is bonded to the second element or to the remaining
portion of the second element to form a bonded structure. The bonded
structure is then heated to cause the first element to detach from the
bonded structure.