A method of fabricating a semiconductor device so as to cause the device to have a desired transfer characteristic. Computations may be performed that predict a transfer characteristic of the semiconductor device for each of a plurality of different sets of values of available control parameters that may be used during the fabrication of the semiconductor device. A set of values of available control parameters that the computations predict will cause the semiconductor device to substantially provide the desired transfer characteristic may be identified, and the semiconductor device may be fabricated based on these identified values.