Methods of forming capacitors include forming a first mold layer and a
second mold layer on a substrate, forming storage electrodes through the
mold layers, the storage electrodes arranged in rows extending in a first
direction and spaced apart from adjacent storage electrodes along the
first direction by a first interval. The storage electrodes are spaced
apart from adjacent storage electrodes along a second direction oblique
to the first direction by a second interval smaller than the first
interval. First and second sacrificial layers are formed on the storage
electrodes layer partially filling up a gap between adjacent storage
electrodes along the first direction and filling up a gap between the
adjacent storage electrodes along the second direction. Sacrificial
spacers may be formed on sidewalls of the storage electrodes by etching
the sacrificial layers. The second mold layer may be etched using the
sacrificial spacers as etching masks to define a plurality of stabilizing
structures. Resulting devices are also disclosed.