Provided is a hafnium alloy target containing either or both of Zr and Ti
in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal
grain size is 1-100 .mu.m, the impurities of Fe, Cr and Ni are
respectively 1 wtppm or less, and the habit plane ratio of the plane
{002} and three planes {103}, {014} and {015} lying within 35.degree.
from {002} is 55% or greater, and the variation in the total sum of the
intensity ratios of these four planes depending on locations is 20% or
less. As a result, obtained is a hafnium alloy target having favorable
deposition property and deposition speed, which generates few particles,
and which is suitable for forming a high dielectric gate insulation film
such as HfO or HfON film, and the manufacturing method thereof.