The invention relates to a method of forming a layer of elastically
unstrained crystalline material intended for electronics, optics, or
optronics applications, wherein the method is carried out using a
structure that includes a first crystalline layer which is elastically
strained under tension (or respectively in compression) and a second
crystalline layer which is elastically strained in compression (or
respectively under tension), with the second layer being adjacent to the
first layer. The method includes a step of diffusion between the two
layers so that the differences between the respective compositions of the
two layers is progressively reduced until they are substantially the
same, so that the two layers then form just a single final layer of
crystalline material having a composition which, in aggregate, is
uniform, and wherein the respective compositions, thicknesses, and
degrees of strain of the two layers are initially selected so that, after
diffusion, the material then constituting the final layer no longer, in
aggregate, exhibits elastic strain. The diffusion can be accomplished by
heat treating the structure.