A non-volatile memory system is programmed so as to reduce or avoid
program disturb. In accordance with one embodiment, multiple program
inhibit schemes are employed for a single non-volatile memory system.
Program inhibit schemes are selected based on the word line being
programmed. Certain program inhibit schemes have been discovered to
better minimize or eliminate program disturb at select word lines. In one
embodiment, selecting a program inhibit scheme includes selecting a
program voltage pulse ramp rate. Different ramp rates have been
discovered to better minimize program disturb when applied to select word
lines. In another embodiment, the temperature of a memory system is
detected before or during a program operation. A program inhibit scheme
can be selected based on the temperature of the system.