A phase change memory device comprises a photolithographically formed
phase change memory cell having first and second electrodes and a phase
change bridge positioned between and electrically coupling the opposed
sides of the electrodes to one another. The phase change bridge has a
length, a width and a thickness. The width, the thickness and the length
are less than a minimum photolithographic feature size of the process
used to form the phase change memory cell. The size of the photoresist
masks used in forming the memory cell may be reduced so that the width
and the length of the phase change bridge are each less than the minimum
photolithographic feature size.