Methods and systems for growing uniform oxide layers include an example
method including growing a first layer of oxide on first and second
facets of the substrate, with the first facet having a faster oxide
growth rate. The oxide is removed from the first facet and a second oxide
layer is grown on the first and second facets. Removing the oxide from
the first facet includes shielding the second facet and exposing the
substrate to a deoxidizing condition. The second facet is then exposed to
receive the second oxide layer. Areas having differing oxide thicknesses
are also grown by repeatedly growing oxide layers, selectively shielding
areas, and removing oxide from exposed areas.