Method and system for memory devices is provided. The system includes a plurality of non-volatile storage elements connected in a string between a source side element and a drain side element; a plurality of bit lines, wherein each bit line is connected to a plurality of non-volatile storage elements; and a plurality of word lines, the plurality of word lines include a dummy word line between a source side select element and a first word line that is connected to a first non-volatile storage element to be programmed, wherein a program voltage is applied to the first non-volatile storage element connected to the first word line and an intermediate voltage is applied to a second non-volatile storage element connected to the dummy word line.

 
Web www.patentalert.com

< Apparatus with segmented bitscan for verification of programming

> Reducing program disturb in non-volatile memory using multiple boosting modes

~ 00472