Method and system for memory devices is provided. The system includes a
plurality of non-volatile storage elements connected in a string between
a source side element and a drain side element; a plurality of bit lines,
wherein each bit line is connected to a plurality of non-volatile storage
elements; and a plurality of word lines, the plurality of word lines
include a dummy word line between a source side select element and a
first word line that is connected to a first non-volatile storage element
to be programmed, wherein a program voltage is applied to the first
non-volatile storage element connected to the first word line and an
intermediate voltage is applied to a second non-volatile storage element
connected to the dummy word line.