A method of testing a dynamic random access memory (DRAM) device that has N rows of storage cells and that requires, in at least one operating mode, at least N refresh commands to be received from an external source within a specified time interval. The rows of storage cells are tested in a first retention test to identify rows that fail to retain data over the specified time interval. The rows that fail to retain data over the specified time interval are tested in a second retention test to identify rows that retain data over an abbreviated time interval, the abbreviated time interval being shorter than the specified time interval.