A method for performing failure analysis on a semiconductor device under inspection includes preparing of a device sample using an encapsulation material containing a dye, the prepared device sample possibly including a failure area having wicked in encapsulation material containing the dye. The prepared device sample is then sectioned to facilitate viewing a cross section face of the device under inspection. Lastly, a dark field analysis on the prepared device sample is performed with the use of dark field illumination. Responsive to at least one failure area containing wicked in encapsulation material with dye occurring on the cross section face of the device under inspection, the failure area can be readily identified as well as a contrast and perspective of remaining portions of the cross section face being maintained.