One aspect of this disclosure relates to a method for operating a memory cell. According to various embodiments, the method includes charging a storage node of the memory cell, including forward biasing a thyristor to switch the thyristor into a high conductance low impedance state, and storing a first charge type in the storage node and storing the first charge type in a trapping insulator separating a floating body of an access transistor from the thyristor. The method further includes discharging the storage node of the memory cell, including reverse biasing the thyristor into a low conductance high impedance state, and discharging the first charge type from the storage node and discharging the first charge type from the trapping insulator. Other aspects and embodiments are provided herein.