A memory cell includes a memory element and a selection element coupled to the memory element. The selection element includes a first junction portion, having a first type of conductivity, and a second junction portion, having a second type of conductivity and forming a rectifying junction with the first junction portion. The first junction portion and the second junction portion are made of materials selected in the group consisting of: chalcogenides and conducting polymers.

 
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> System architecture and method for three-dimensional memory

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