A method of making efficient Integrated Diamond Carrier heat sink and mounting structures usable typically to mount the solid-state laser bars often employed for pumping high power lasers, for example. The disclosed method forms the Integrated Diamond Carrier on a shaped sacrificial substrate member by chemical vapor deposition growing of diamond on a patterned substrate, made from for example silicon semiconductor. The substrate serves as a mold and is etched away after Integrated Diamond Carrier base plate formation leaving the freestanding diamond carrier. Optically usable surfaces are achieved on the Integrated Diamond Carrier through use of substrate crystal plane characteristics and an improved deposition arrangement.