A method of manufacturing a thin film transistor includes: forming an
amorphous silicon layer and a blocking layer; forming a photoresist layer
having first and second photoresist patterns spaced apart from each other
on the blocking layer; etching the blocking layer using the first
photoresist pattern as a mask to form first and second blocking patterns;
reflowing the photoresist layer so the first and second photoresist
patterns abut each other; forming a capping layer and a metal layer;
removing the photoresist layer to expose the blocking layer and an offset
region between the blocking layer and the metal layer; crystallizing the
amorphous silicon layer by diffusing metals in the metal layer through
the capping layer; etching the poly silicon layer using the first and
second blocking patterns as a mask to form first and second semiconductor
layers; and removing the first and second blocking patterns.