A thin-film transistor (TFT) is fabricated by providing a substrate,
depositing and patterning a metal gate, anodizing the patterned metal
gate to form a gate dielectric on the metal gate, depositing and
patterning a channel layer comprising a multi-cation oxide over at least
a portion of the gate dielectric, and depositing and patterning a
conductive source and conductive drain spaced apart from each other and
disposed in contact with the channel layer.