A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.

 
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