Provided are an electrostatic discharge (ESD) protection device and a method for making such a device. In one example, the ESD protection device includes a Zener diode region formed in a substrate and an N-type metal oxide semiconductor (NMOS) device formed adjacent to the Zener diode region. The Zener diode region has two doped regions, a gate with a grounded potential positioned between the two doped regions, and two light doped drain (LDD) features formed in the substrate. One of the LDD features is positioned between each of the two doped regions and the gate. The NMOS device includes a source and a drain formed in the substrate and a second gate positioned between the source and the drain.