A magnetoresistive sensor having a novel laminated hard bias structure that possesses exceptional magnetic performance characteristics when deposited over a crystalline structure such as in a partial mill sensor design in which a portion of a sensor stack extends beyond the active area of the sensor. The hard bias structure may include a seed layer comprising a layer of Si sandwiched between layers of CrMo. The hard bias structure, which can be formed over the seed layer structure, includes layers of CoPt separated a layer of CrMo.